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Max Super Slim Silicon Transistor D2PAK Cigarette Packing Machine Parts

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Max Super Slim Silicon Transistor D2PAK Cigarette Packing Machine Parts

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Brand Name : Upperbond

Model Number : Maker

Certification : CE, ISO

Place of Origin : China

MOQ : 2 pcs

Price : Negotiable

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 10000 pcs/month

Delivery Time : 5-8 days

Packaging Details : Carton

Material : Treated stainless steel

Machine Models : Protos, Passim, MK8, MK9,

Hardness : Greatly Enhanced

Other Models : Skoda, CME, Sasib

Port of Shipment : Guangzhou, Shanghai

Cigarette Diameter : 5.4mm - 8.0mm

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Max Super Slim Silicon Transistor D2PAK Cigarette Packing Machine Parts


A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.


IRFZ44NS/LPbF


ParameterMin.
V(BR)DSSDrain-to-Source Breakdown Voltage55
△V(BR)DSS 仏 TjBreakdown Voltage Temp. Coefficient
RDS(on)Static Drain-to-Source On-Resistance
VGS(th)Gate Threshold Voltage2.0
gtsForward Transconductance19
bssDrain-to-Source Leakage Current
lossGate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
QgTotal Gate Charge
QgsGate-to-Source Charge
QgdGate-to-Drain ("Miller") Charge
td(on)Turn-On Delay Time
trRise Time
td(off)Turn-Off Delay Time
tfFall Time
LsInternal Source Inductance
CjssInput Capacitance
CossOutput Capacitance
CrssReverse Transfer Capacitance
EasSingle Pulse Avalanche Energy®

Naming


The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor.


High-Frequency Transistor


The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.



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